Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures

Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures

We report the observation of a thermally activated resonant tunnelling feature in the current– voltage characteristics (I(V)) of triple barrier resonant tunnelling structures (TBRTS) due to the alignment of the n = 1 confined states of the two quantum wells within the active region. With great renewed interest in tunnelling structures for high frequency (THz) operation, the understanding of dev...

Resonant tunneling in double-quantum-well triple-barrier heterostructures.

We present a low-temperature ~mK! magnetotransport study, using intense pulsed magnetic fields to 50 T, of two double GaAs quantum well, triple AlAs barrier resonant tunneling structures, which demonstrates the critical influence of the second quantum well on the tunneling behavior. We show that charge accumulation in the first well, and thus the overall tunneling characteristic, is controlled ...

Resonant Tunneling in Double Superlattice Barrier Heterostructures

We have invest igated resonant tunnel ing in double barr ier heterostructures in which the tunnel barr iers have been replaced by short period superlattices, and have shown for the first t ime quantum well confinement in a s ingle quantum well bounded by superlattices. These results also demonstrate the first u t i l iza t ion of shor t period b ina ry super la t t ices as effective t unne l ba...

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realization of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electro...

Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures